• DocumentCode
    2902767
  • Title

    Transport properties of CVD-grown graphene nanoribbon field-effect transistors

  • Author

    Lyons, Austin S. ; Behnam, Ashkan ; Chow, Edmond K. ; Pop, Eric

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
  • fYear
    2011
  • fDate
    20-22 June 2011
  • Firstpage
    129
  • Lastpage
    130
  • Abstract
    This work represents the first demonstration of GNR FETs using CVD-grown graphene, a key step towards large-scale integration. CVD GNRs are comparable to the best state-of-the-art GNRs obtained by other methods, and can support current densities up to ~3 mA/μm. Presenting data from 22 samples, this work also serves to identify key future challenges, such as device variability.
  • Keywords
    chemical vapour deposition; current density; graphene; large scale integration; organic field effect transistors; C; CVD-grown graphene; GNR FET; current densities; graphene nanoribbon field-effect transistors; large-scale integration; transport properties; Electric breakdown; FETs; Gold;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2011 69th Annual
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-61284-243-1
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2011.5994450
  • Filename
    5994450
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2902767