Interconnect Open Defect Diagnosis with Physical Information

Circuit behavior in the presence of interconnect open defects is affected by four major factors: the capacitances between the floating node and its neighboring nodes, the capacitances inside down-stream gates, initial trapped charge, and the threshold voltages of down-stream gates. Current interconnect open diagnosis methods either ignore all of these factors or consider a subset of them only. Thus the diagnosis results from current procedures may not be as accurate as possible. In this paper, we present an interconnect open defect diagnosis method taking all these factors into account. Experiments conducted on benchmark circuits demonstrate that the proposed method can achieve a very high diagnosis accuracy and resolution