• DocumentCode
    2904891
  • Title

    Investigation of single event burnout sensitive depth in power MOSFETS

  • Author

    Darracq, F. ; Pouget, V. ; Lewis, D. ; Fouillat, P. ; Lorfevre, E. ; Ecoffet, R. ; Bezerra, F.

  • Author_Institution
    IMS, Univ. Bordeaux 1, Talence, France
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    106
  • Lastpage
    111
  • Abstract
    The depth of the Single-event burnout sensitive volume of power MOSFETs is investigated using TCAD simulation and TPA laser testing approaches.
  • Keywords
    electronic engineering computing; power MOSFET; technology CAD (electronics); TCAD simulation; TPA laser testing approach; power MOSFET; single-event burnout sensitive volume depth; Computational modeling; Laser beams; Lattices; Logic gates; MOSFETs; Optical beams; Semiconductor process modeling; SEB; TPA laser testing; modeling; power MOSFET;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
  • Conference_Location
    Bruges
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4577-0492-5
  • Electronic_ISBN
    0379-6566
  • Type

    conf

  • DOI
    10.1109/RADECS.2009.5994563
  • Filename
    5994563
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2904891