• DocumentCode
    2904926
  • Title

    A Gallium Arsenide IC Pilot Line

  • Author

    Strieter, Frederick J.

  • Author_Institution
    Honeywell, Inc., Optoelectronics Division, 830 East Arapaho Road, Richardson, TX 75081
  • Volume
    3
  • fYear
    1985
  • fDate
    20-23 Oct. 1985
  • Firstpage
    718
  • Lastpage
    718
  • Abstract
    A gallium arsenide pilot line has been established for the production of depletion-mode MESFET devices. Although the initial emphasis has been directed towards digital ICs, microwave devices can also be built on this line with the addition of submicron lithography. While the initial installed equipment capacity is 100 three inch wafers per week, the facility is sized for over 10 times that level. The pilot line will operate both as a production facility for custom and standard GaAs devices and as a foundry operation.
  • Keywords
    Foundries; Gallium arsenide; Lithography; Microwave devices; Production facilities;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Military Communications Conference, 1985. MILCOM 1985. IEEE
  • Conference_Location
    Boston, MA, USA
  • Type

    conf

  • DOI
    10.1109/MILCOM.1985.4795131
  • Filename
    4795131
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2904926