Electromigration In Cu/Sn-58Bi/Cu Interconnects

Author

Yang, Q.L. ; Guo, J.D. ; Shang, J.K.

Author_Institution

Inst. of Metal Res., Shenyang

fYear

2007

fDate

14-17 Aug. 2007

Firstpage

1

Lastpage

3

Abstract

The microstructural changes on the surface of Cu/Sn-58Bi/Cu interconnects, under current stressing of 2.7 times 10⁴A/cm² 95degC for 60 hrs, are examined in this paper. At the anode side, the Bi phase accumulated in front of the intermetallic compound (IMC), and bumps of Bi rich solder extruded out of the surface along the IMC/solder interface. At the cathode side, a Bi depleted zone appeared, which was composed of Sn rich particles and tiny Bi-rich particles. After grinding and polishing, a continuous Bi layer was observed accumulated in front of the IMC at the anode side, which caused a reliability concern in the solder joints.

Keywords

bismuth alloys; copper alloys; current density; electromigration; integrated circuit interconnections; integrated circuit reliability; solders; surface structure; tin alloys; CuSn-BiCu; current stressing; electromigration; grinding; intermetallic compound; microstructural parameters; polishing; solder interconnects; solder joint reliability; temperature 95 C; time 60 hr; Aging; Anodes; Bismuth; Copper; Current density; Electromigration; Materials science and technology; Microstructure; Soldering; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology, 2007. ICEPT 2007. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-1392-8

Electronic_ISBN

978-1-4244-1392-8

Type

conf

DOI

10.1109/ICEPT.2007.4441518

Filename

4441518