A new CMOS voltage reference scheme based on Vth-difference principle

Author

Toledo, Luis ; Lancioni, Walter ; Petrashin, Pablo ; Dualibe, Carlos ; Vázquez, Carlos

Author_Institution

Laboratorio de Microelectron., Univ. Catolica de Cordoba

fYear

2007

fDate

27-30 May 2007

Firstpage

3840

Lastpage

3843

Abstract

A new CMOS voltage reference, which takes advantage of the temperature dependence of NMOS and PMOS threshold voltages, is presented. Due to the circuit architecture the mobility factor is completely cancelled. It does not use resistors and all transistors works in strong inversion. The circuit is simple, opamp-less and can be implemented in a standard CMOS process. When the input power supply changes from 1.8V to 2.1V and the temperature changes from -20 to 80degC, simulations for the reference circuit using the proposed architecture shows an output voltage of 1.184V and a T_FC of 100 ppm/degC.

Keywords

CMOS integrated circuits; reference circuits; -20 to 80 C; 1.8 to 2.1 V; CMOS process; CMOS voltage reference scheme; NMOS threshold voltages; PMOS threshold voltages; Vth-difference principle; voltage reference circuit; CMOS technology; Circuit simulation; Digital-analog conversion; Equations; Low voltage; MOS devices; MOSFETs; Power supplies; Temperature dependence; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on

Conference_Location

New Orleans, LA

Print_ISBN

1-4244-0920-9

Electronic_ISBN

1-4244-0921-7

Type

conf

DOI

10.1109/ISCAS.2007.377876

Filename

4253519