Longitudinal distribution analysis of InP growth in a horizontal MOVPE reactor for improved film quality

Author

Asawamethapant, W. ; Sugiyama, M. ; Shimogaki, Y. ; Nakano, Y.

Author_Institution

Dept. of Electron. Eng., Tokyo Univ., Japan

fYear

1999

fDate

1999

Firstpage

55

Lastpage

58

Abstract

We have investigated the longitudinal distribution of InP growth rate and film quality over the entire susceptor of a horizontal MOVPE with TMIn and TBP to understand cause of film roughness and to improve the film quality. We studied the effects of-source gas velocity, growth temperature, and V/III ratio. From these observations, we propose a reaction model to explain the cause of the film roughness. Based on this model, we could optimize the growth condition; by decreasing total pressure, and thereby enhancing the diffusion of precursors to suppress InP polymerization in gas phase, the film quality has been very much improved

Keywords

III-V semiconductors; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; III-V compound semiconductor; InP; InP growth; film quality; horizontal MOVPE reactor; longitudinal distribution; metalorganic vapor phase epitaxy; precursor diffusion; reaction model; surface roughness; Epitaxial growth; Epitaxial layers; Indium phosphide; Inductors; Rough surfaces; Scanning electron microscopy; Semiconductor films; Surface morphology; Surface roughness; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773633

Filename

773633