MOVPE overgrowth of (InGa)P gratings for GaAs-based DBR laser

Author

Hofmann, Lars ; Erbert, Götz ; Knauer, Arne ; Smirnitski, Vladimir ; Sebastian, Jörgen ; Klehr, Andreas ; Weyers, Markus ; Stolz, Wolfgang

Author_Institution

Ferdmand-Braun-Inst. fur Hochstrequenztech., Berlin, Germany

fYear

1999

fDate

1999

Firstpage

119

Lastpage

122

Abstract

Distributed Bragg reflector lasers with an (InGa)P waveguide layer are realized by two-step metalorganic vapor phase epitaxy. A first-order grating in (InGa)P with a period of 168 nm overgrown with (AlGa)As is used for the operating wavelength of 1060 nm. The regrowth step is optimized by varying the heat-up procedure, the growth temperature and the start of growth using arsine and tertiary butyl arsine as group V precursors. With both precursors we achieve excellent DBR lasers with threshold current densities of 116 A/cm² and output powers of 60 mW

Keywords

III-V semiconductors; MOCVD; current density; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; laser transitions; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; waveguide lasers; 1060 nm; 60 mW; AlGaAs; GaAs-based DBR laser; InGaP; InGaP gratings; InGaP waveguide layer; MOVPE overgrowth; excellent DBR lasers; first-order grating; group V precursors; growth temperature; heat-up procedure; operating wavelength; output power; regrowth step optimisation; tertiary butyl arsine; threshold current densities; two-step metalorganic vapor phase epitaxy; Distributed Bragg reflectors; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Gratings; Laser theory; Scanning electron microscopy; Surface cracks; Temperature; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773649

Filename

773649