Properties of fully self-aligned InAlAs/InGaAs PNP HBTs with very thin bases

Author

Sawdai, D. ; Zhang, X. ; Cui, D. ; Pavlidis, D. ; Bhattacharya, P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1999

fDate

1999

Firstpage

187

Lastpage

190

Abstract

For the first time, the effect of base thickness and parasitic collector resistance on InP-based PNP HBTs was determined experimentally. HBTs with 350-Å and 900-Å base layers and self-aligned collector contacts demonstrated DC gain of 21.3 and 5.9, f _T of 18.6 and 8.5 GHz, and f_max of 27.3 and 20.8 GHz, respectively. This is the highest f_T reported for any InP-based PNP HBT. Analysis of these HBTs demonstrated that recombination of holes in the neutral base limited the DC gain, and hole transit across the base was the most significant component of τ_ec. In addition, comparison of HBTs with and without self-aligned collectors demonstrated that collector series resistance had a minor but noticeable impact on f_T as well as the gain and power-added efficiency at 8 GHz

Keywords

III-V semiconductors; aluminium compounds; electrical resistivity; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device measurement; 20.8 GHz; 350 A; 8 GHz; 8.5 GHz; 900 A; DC gain; InAlAs-InGaAs-InP; InP-based PNP HBTs; base thickness; collector series resistance; fully self-aligned InAlAs/InGaAs PNP HBTs; hole recombination; hole transit; parasitic collector resistance; power-added efficiency; self-aligned collector contacts; thin bases; Contact resistance; Electric resistance; Etching; Fabrication; Gold; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Metallization; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773665

Filename

773665