DocumentCode
2908056
Title
Proposal of a novel semiconductor optical waveguide isolator
Author
Takenaka, Mitsuru ; Nakano, Yoshiaki
Author_Institution
Dept. of Electron. Eng., Tokyo Univ., Japan
fYear
1999
fDate
1999
Firstpage
289
Lastpage
292
Abstract
A novel semiconductor optical waveguide isolator is proposed and analyzed. The proposed isolator has semiconductor optical amplifier (SOA) structure with a ferromagnetic metal (iron or nickel, for example) deposited on top for providing the magneto-optical effect as well as electrical contact. By nonreciprocal complex effective refractive index change through the magneto-optical effect and by appropriate current injection into SOA, only the backward-propagating light is to become subject to optical loss. The amount of nonreciprocal complex effective refractive index change has been estimated by a perturbation method. Wavelength dispersion and tolerance of fabrication errors have also been calculated. As a result the isolator is predicted to have practical isolation ratio (40 dB) with compact size (1.58 mm) at 1.55 μm wavelength, wide operation wavelength range, and large fabrication tolerance
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; magneto-optical isolators; Fe; InGaAsP; InP; Ni; backward-propagating light; compact size; current injection; electrical contact; fabrication errors; ferromagnetic metal; large fabrication tolerance; magneto-optical effect; nonreciprocal complex effective refractive index change; optical loss; perturbation method; practical isolation ratio; semiconductor optical amplifier structure; semiconductor optical waveguide isolator; wavelength dispersion; wide operation wavelength range; Isolators; Magnetooptic effects; Optical refraction; Optical variables control; Optical waveguides; Proposals; Refractive index; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location
Davos
ISSN
1092-8669
Print_ISBN
0-7803-5562-8
Type
conf
DOI
10.1109/ICIPRM.1999.773691
Filename
773691
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