DocumentCode
2908417
Title
Progress with 100 mm diameter In0.53Ga0.47As/InP wafer processing
Author
Olsen, Gregory H. ; Lange, Michael J. ; Sugg, Alan R. ; Ettenberg, Martin H. ; Sudol, John J. ; Cohen, Marshall J. ; Forrest, Steven R.
Author_Institution
Sensors Unlimited Inc., Princeton, NJ, USA
fYear
1999
fDate
1999
Firstpage
361
Lastpage
363
Abstract
Photodetector array results for InGaAs/InP epitaxial layers grown on 50 and 75 mm diameter InP substrates are presented. Best shunt-resistance area products for lattice-matched material exceed 100,000 ohm-cm2. X-ray topography results indicate that low defect density (<10,000 cm-2) iron-doped InP substrates are available in 100 mm diameter. Low dark current results were also obtained with a a “spin-on” zinc diffusion technique whereby the source of zinc is “spun-on” much like a photoresist
Keywords
III-V semiconductors; X-ray topography; arrays; dark conductivity; gallium arsenide; indium compounds; photodetectors; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 100 mm; In0.53Ga0.47As-InP; InP; X-ray topography; dark current; defect density; epitaxial layers; lattice-matched material; photodetector array; shunt-resistance area products; spin-on diffusion; wafer processing; Capacitance; Circuits; Current measurement; Dark current; Density measurement; Electrical resistance measurement; Indium phosphide; Photodetectors; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location
Davos
ISSN
1092-8669
Print_ISBN
0-7803-5562-8
Type
conf
DOI
10.1109/ICIPRM.1999.773709
Filename
773709
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