DocumentCode
2908612
Title
Optimization of Ge-Dose and Doping in Base of SiGe HBTs
Author
Khanduri, Gagan ; Panwar, B.S.
Author_Institution
Indian Inst. of Technol. Delhi, New Delhi
fYear
2007
fDate
26-28 Sept. 2007
Firstpage
127
Lastpage
130
Abstract
The present work gives an approach to optimize the base doping and Ge-dose in SiGe HBTs using the fixed point iterative methodology and includes the effect of minority carrier velocity saturation on total base transit time for SiGe HBTs. It is shown that shifted-Ge profile approach and triangular Ge-profile in base can lead to simultaneous optimization of Ge-dose and base dopant distribution for minimum base transit time.
Keywords
Ge-Si alloys; carrier mobility; heterojunction bipolar transistors; iterative methods; semiconductor doping; HBT; SiGe; base doping optimization; dopant distribution; fixed point iterative methodology; germanium-dose profile; minority carrier velocity saturation; total base transit time; Bipolar transistors; Capacitive sensors; Delay effects; Doping profiles; Electrons; Germanium silicon alloys; Iterative methods; Optimization methods; Photonic band gap; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuits, 2007. ISIC '07. International Symposium on
Conference_Location
Singapore
Print_ISBN
978-1-4244-0797-2
Electronic_ISBN
978-1-4244-0797-2
Type
conf
DOI
10.1109/ISICIR.2007.4441813
Filename
4441813
Link To Document