• DocumentCode
    2908623
  • Title

    190 GHz InP HEMT MMIC LNA with dry etched backside vias

  • Author

    Barsky, M. ; Lai, R. ; Kok, Y.L. ; Sholley, M. ; Streit, D.C. ; Block, T. ; Liu, P.H. ; Sabin, E. ; Rogers, H. ; Medvedev, Viktor ; Gaier, T. ; Samoska, L.

  • Author_Institution
    Electron. Space & Technol. Div., TRW Inc., Redondo Beach, CA, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    423
  • Lastpage
    425
  • Abstract
    We report an InP HEMT MMIC LNA incorporating dry etched backside ground plane vias with an on-wafer measured peak gain of 9.6 dB at 190 GHz. The 2-stage balanced LNA exhibited over 7 dB gain across a 30 GHz bandwidth. The high gain and high operating frequency of the amplifier is attributed to the lower source inductance provided by the 25 μm dry etched ground vias, the 80 nm T-gate, and the graded In0.80 Ga0.20As channel HEMT
  • Keywords
    HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MMIC; indium compounds; sputter etching; 190 GHz; 30 GHz; 7 to 9.6 dB; InP; InP HEMT MMIC LNA; T-gate; backside ground plane via; dry etching; graded channel device; source inductance; Dry etching; Extraterrestrial measurements; Gain; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; MMICs; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
  • Conference_Location
    Davos
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-5562-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1999.773723
  • Filename
    773723
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2908623