DocumentCode
2910392
Title
Modeling well edge proximity effect on highly-scaled MOSFETs
Author
Sheu, Yi-Ming ; Su, Ke-Wei ; Yang, Sheng-Jier ; Chen, Hsien-Te ; Wang, Chih-Chiang ; Chen, Ming-Jer ; Liu, Sally
Author_Institution
Taiwan Semicond. Manuf. Co., Hsinchu
fYear
2005
fDate
21-21 Sept. 2005
Firstpage
831
Lastpage
834
Abstract
Well edge proximity effect caused by ion scattering during implantation in highly-scaled CMOS technology was explored from a process and physics point of view. TCAD simulation was employed to visualize the internal change of the MOSFETs. A new compact model for SPICE was proposed using physics-based understanding and was calibrated with experimental silicon test sets. Circuit simulation using the proposed model was conducted to evaluate the improvement in accuracy
Keywords
CMOS integrated circuits; MOSFET; SPICE; circuit simulation; ion implantation; ion mobility; proximity effect (lithography); technology CAD (electronics); CMOS technology; SPICE; TCAD simulation; circuit simulation; highly-scaled MOSFET; implantation; ion scattering; physics-based understanding; silicon test sets; well edge proximity effect; CMOS process; CMOS technology; Circuit simulation; MOSFETs; Physics; Proximity effect; SPICE; Scattering; Semiconductor device modeling; Visualization;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005
Conference_Location
San Jose, CA
Print_ISBN
0-7803-9023-7
Type
conf
DOI
10.1109/CICC.2005.1568798
Filename
1568798
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