DocumentCode
2913521
Title
Improving RBSOA of 10 kV class bipolar devices
Author
Gao, Yan ; Huang, Alex Q.
Author_Institution
Dept. of Electr. & Comput. Eng., NC State Univ., Raleigh, NC
fYear
2005
fDate
6-6 Nov. 2005
Abstract
Although some effort has been made to develop a 10 kV bipolar device, one of the main challenges to this development is the small RBSOA expected from a 10 kV class device. Based on the good understanding of what exactly determines the RBSOA of a large area bipolar device, in this paper, we stated that a better RBSOA device can be achieved by increase the sustain-mode dynamic avalanche capability of the device. In the punch through case when the device is in sustained mode, an analytical model is also developed based on the concept
Keywords
power bipolar transistors; power semiconductor switches; 10 kV; RBSOA; analytical model; bipolar devices; high voltage PNP transistor; power switch; punch through case; reverse biased safe operating area; sustain-mode dynamic avalanche; Analytical models; Breakdown voltage; Charge carrier processes; Current density; Doping; Equations; Failure analysis; Impact ionization; Power electronics; Space charge;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics Society, 2005. IECON 2005. 31st Annual Conference of IEEE
Conference_Location
Raleigh, NC
Print_ISBN
0-7803-9252-3
Type
conf
DOI
10.1109/IECON.2005.1568982
Filename
1568982
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