From VHF to UHF CMOS-MEMS monolithically integrated resonators

Author

Teva, J. ; Abadal, G. ; Uranga, A. ; Verd, J. ; Torres, F. ; Lopez, J.L. ; Esteve, J. ; Pérez-Murano, F. ; Barniol, N.

Author_Institution

Univ. Autonoma de Barcelona (UAB), Barcelona

fYear

2008

fDate

13-17 Jan. 2008

Firstpage

82

Lastpage

85

Abstract

This paper presents the design, fabrication and characterization of microresonators exhibiting resonance frequencies in the VHF and UHF bands, fabricated using the available layers of the standard and commercial CMOS technology, AMS-0.35mum. The resonators are released in a post-CMOS process consisting on a maskless wet etching. A clamped-clamped beam with resonance frequency of 290 MHz exhibiting Q-factors of 970 in air and 2836 in vacuum is presented. The fabrication and design of a ring bulk acoustic resonator (RBAR) designed to operate at 1 GHz is described. Preliminary results on the electrical characterization show a resonance frequency of 1.04 GHz and a quality factor of 400 in air.

Keywords

CMOS integrated circuits; UHF integrated circuits; VHF circuits; acoustic resonators; bulk acoustic wave devices; etching; micromechanical resonators; CMOS technology; CMOS-MEMS monolithically integrated resonators; clamped-clamped beam; electrical characterization; frequency 1 GHz; frequency 290 MHz; maskless wet etching; microresonators; resonance frequency; ring bulk acoustic resonator; size 0.35 mum; CMOS process; CMOS technology; Circuits; Costs; Fabrication; Microcavities; Micromechanical devices; Q factor; Resonance; Resonant frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on

Conference_Location

Tucson, AZ

ISSN

1084-6999

Print_ISBN

978-1-4244-1792-6

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2008.4443598

Filename

4443598