DocumentCode
2918220
Title
An experiment to improve bipolar gain and bandwidth
Author
Kho, David
Author_Institution
Technol. Dept., X-FAB Sarawak Sdn. Bhd., Kuching, Malaysia
fYear
2010
fDate
11-14 April 2010
Firstpage
357
Lastpage
360
Abstract
An experiment in base and pedestal collector implant has been conducted to study the impact and further improve the performance of a 0.6 micron silicon poly emitter bipolar transistor. It has been shown the bandwidth can be improved form 13 GHz to 15GHz with acceptable changes to the other bipolar performances.
Keywords
bipolar transistors; silicon; Si; base collector implant; bipolar gain; frequency 13 GHz to 15 GHz; pedestal collector implant; poly emitter bipolar transistor; size 0.6 micron; Bandwidth; Bipolar integrated circuits; Bipolar transistors; Breakdown voltage; Degradation; Frequency measurement; Implants; Performance gain; Silicon carbide; Testing; Bandwidth; Poly emitter bipolar; SIC implant;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Devices, Systems and Applications (ICEDSA), 2010 Intl Conf on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-6629-0
Type
conf
DOI
10.1109/ICEDSA.2010.5503043
Filename
5503043
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