Electrically-pumped Si-laser using nano-particle-modified metal-oxide-Si structures

Author

Lin, Ching-Fuh ; Liang, Eih-Zhe ; Huang, Chu-Ting ; Lin, Kung-An ; Shu, Shiu-Jia

Author_Institution

Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2005

fDate

6-10 Nov. 2005

Abstract

Measurement on the carrier lifetime shows that the radiative-recombination rate in Si can be enhanced to be more than twice of the non-radiative-recombination rate at large injection current using the nano-particle modified metal-oxide-silicon (MOS) structure. With the enhanced radiative recombination, the device with such a MOS structure exhibits lasing behaviours under forward bias of current injection at room-temperature and cw operation. The laser has the threshold current of 56 mA. The lasing wavelength well corresponds to the Si indirect-bandgap energy.

Keywords

MIS structures; carrier lifetime; nanoparticles; semiconductor lasers; silicon; 56 mA; carrier lifetime measurement; cw operation; electrically-pumped Si-laser; forward bias; nano-particle-modified metal-oxide-Si structure; radiative-recombination rate; Charge carrier lifetime; Frequency response; Nanostructures; Photonic band gap; Pump lasers; Radiative recombination; Semiconductor lasers; Silicon; Spontaneous emission; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics Society, 2005. IECON 2005. 31st Annual Conference of IEEE

Print_ISBN

0-7803-9252-3

Type

conf

DOI

10.1109/IECON.2005.1569277

Filename

1569277