DocumentCode
2918689
Title
Room-temperature cw operation of GaInAsSb/AlGaAsSb quantum well diode lasers emitting beyond 2 /spl mu/m
Author
Mermelstein, C. ; Simanowski, S. ; Mayer, M. ; Kiefer, R. ; Schmitz, J. ; Walther, M. ; Wagner, J.
Author_Institution
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fYear
2000
fDate
7-12 May 2000
Firstpage
65
Abstract
Summary form only given. We have demonstrated room-temperature CW operation of large optical cavity GaInAsSb-AlGaAsSb type-I QW lasers emitting at 2.25 /spl mu/m, lasing up to at least 320 K. A maximum current efficiency of 0.16 W/A and power efficiency of 17% has been achieved.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; 17 percent; 2.25 mum; 320 K; GaInAsSb-AlGaAsSb; GaInAsSb-AlGaAsSb type-I QW lasers; GaInAsSb/AlGaAsSb quantum well diode lasers; large optical cavity; maximum current efficiency; power efficiency; room-temperature cw operation; Biomedical optical imaging; Diode lasers; Gas lasers; Laser modes; Laser surgery; Optical design; Quantum well lasers; Semiconductor diodes; Semiconductor lasers; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-55752-634-6
Type
conf
DOI
10.1109/CLEO.2000.906730
Filename
906730
Link To Document