Low-temperature deposition of a polycrystalline Si film on yttria-stabilized zirconia seed layer

Author

Herman, Sukreen Hana ; Horita, Susumu

Author_Institution

Fac. of Electr. Eng., Univ. Teknol. MARA, Shah Alam, Malaysia

fYear

2010

fDate

11-14 April 2010

Firstpage

145

Lastpage

148

Abstract

We have proposed a method to grow a polycrystalline silicon (poly-Si) film on quartz substrate at low-temperature (<;450°C) by using a polycrystalline yttria-stabilized zirconia (poly-YSZ) film as a seed layer. It was found out that the crystallization of the Si film strongly depended on the surface treatment of the YSZ seed layer. We obtained the crystallized Si film by direct deposition on the HF-treated YSZ layer rinsed with ethanol at a temperature as low as 400°C, but that on the YSZ layer rinsed with deionized water (DIW) was amorphous.

Keywords

coating techniques; crystallisation; semiconductor thin films; silicon; surface treatment; yttrium compounds; zirconium compounds; Si; crystallization; deionized water; ethanol; low-temperature deposition; poly-Si film; poly-YSZ film; polycrystalline silicon film; quartz substrate; temperature 400 C; yttria-stabilized zirconia seed layer; Chemicals; Crystallization; Ethanol; Glass; Materials science and technology; Semiconductor films; Substrates; Surface treatment; Temperature; Thin film transistors; Polycrystalline Si; direct deposition; seed layer;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Devices, Systems and Applications (ICEDSA), 2010 Intl Conf on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4244-6629-0

Type

conf

DOI

10.1109/ICEDSA.2010.5503084

Filename

5503084