• DocumentCode
    2919959
  • Title

    Single-event sensitivity of a single SRAM cell

  • Author

    Darracq, F. ; Beauchêne, T. ; Pouget, V. ; Lapuyade, H. ; Lewis, D. ; Fouillat, P. ; Touboul, A.

  • Author_Institution
    IXL, Bordeaux I Univ., Talence, France
  • fYear
    2001
  • fDate
    10-14 Sept. 2001
  • Firstpage
    387
  • Lastpage
    391
  • Abstract
    A test vehicle has been specially realized to demonstrate that different physical mechanisms are responsible for SEU phenomena within an elementary memory cell, depending on the impact location. Validation is performed by means of pulsed laser equipment.
  • Keywords
    SRAM chips; integrated circuit testing; radiation hardening (electronics); impact location; pulsed laser equipment; single SRAM cell; single-event sensitivity; Deconvolution; Laser beams; Laser theory; Optical pulses; Random access memory; Single event upset; Space technology; Spatial resolution; Testing; Vehicles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
  • Print_ISBN
    0-7803-7313-8
  • Type

    conf

  • DOI
    10.1109/RADECS.2001.1159311
  • Filename
    1159311
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2919959