PSP based DCG-FGT transistor model including characterization procedure

Author

Marzaki, A. ; Bidal, V. ; Laffont, R. ; Rahajandraibe, W. ; Portal, J.-M. ; Bouchakour, R.

Author_Institution

ST-Microelectron., Rousset, France

fYear

2011

fDate

11-14 Dec. 2011

Firstpage

228

Lastpage

231

Abstract

A new DCG-FGT (Dual-Control-Gate Floating-Gate Transistor) transistor model for static and transient simulations is presented. The PSP MOS description is used as a basis for the formulation of the conduction channel behavior. The floating gate potential is implicitly computed with an added charge neutrality relation that ensures a good convergence. The model is running under electrical simulator (ELDO) and is characterized thanks to ICCAP software. It has been validated on an advanced STMicroelectronics technology. The final objective of this work is to provide an accurate and scalable model available in design framework.

Keywords

semiconductor device models; transistors; DCG-FGT; ICCAP software; PSP MOS; STMicroelectronics; dual-control-gate floating-gate transistor; electrical simulator; static simulations; transient simulations; transistor model; Computational modeling; Electric potential; Integrated circuit modeling; Logic gates; Mathematical model; Threshold voltage; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems (ICECS), 2011 18th IEEE International Conference on

Conference_Location

Beirut

Print_ISBN

978-1-4577-1845-8

Electronic_ISBN

978-1-4577-1844-1

Type

conf

DOI

10.1109/ICECS.2011.6122255

Filename

6122255