Gold-indium Transient Liquid Phase (TLP) wafer bonding for MEMS vacuum packaging

Author

Welch, Warren C., III ; Najafi, Khalil

Author_Institution

Univ. of Michigan, Ann Arbor

fYear

2008

fDate

13-17 Jan. 2008

Firstpage

806

Lastpage

809

Abstract

This paper reports the first wafer-level vacuum packages created with gold-indium transient liquid phase (TLP) wafer bonding. The packages were bonded at 200degC for 1 hour under a vacuum environment in a commercially available wafer bonder. After bonding, the integrated getters were activated for 1 hour resulting in internal pressures as low as 200 mTorr. The pressures have been stable for over 6 months as measured by integrated Pirani gauges. Although no leak rate trend has been observed, the worst case leak rate that fits within the error of the pressure measurement is 16 mTorr/year (1ldr10^-16 atm.cc.s^-1).

Keywords

gold; indium; micromechanical devices; pressure measurement; vacuum techniques; wafer bonding; wafer level packaging; gold-indium transient liquid phase; integrated Pirani gauges; integrated getters; pressure measurement; temperature 200 C; time 1 hr; wafer bonding; wafer-level MEMS vacuum packages; Hermetic seals; Intermetallic; Isothermal processes; Micromechanical devices; Packaging; Resonance; Temperature sensors; Thermal conductivity; Wafer bonding; Wafer scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on

Conference_Location

Tucson, AZ

ISSN

1084-6999

Print_ISBN

978-1-4244-1792-6

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2008.4443779

Filename

4443779