A new structure of acoustic charge transport devices using GaAs epitaxial films grown on Si substrates

Author

Ohmori, K. ; Sato, K. ; Togura, K. ; Sugai, K. ; Minagawa, S.

Volume

1

fYear

1994

fDate

Oct. 31 1994-Nov. 3 1994

Firstpage

103

Abstract

A new type of acoustic charge transport (ACT) devices was designed and fabricated using GaAs epitaxial films grown on Si substrates. A summary of the GaAs epitaxial growth process and fundamental properties of the film is given. The theoretical and experimental investigation on SAW properties of GaAs/Si structures is described. The first observation of SAW excitation and frequency response on the SAW resonator is presented. The characteristics of GaAs/Si ACT devices and the problems of the device configuration are discussed. The design improvements for future HACT/Si devices are proposed

Keywords

III-V semiconductors; acoustic charge transport devices; frequency response; gallium arsenide; semiconductor epitaxial layers; semiconductor growth; silicon; surface acoustic wave resonators; vapour phase epitaxial growth; ACT devices; GaAs-Si; SAW properties; SAW resonator; Si; acoustic charge transport devices; device configuration; epitaxial films; epitaxial growth process; frequency response; Epitaxial growth; Gallium materials/devices; Semiconductor films; Semiconductor growth; Silicon materials/devices; Surface acoustic wave resonators;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1994. Proceedings., 1994 IEEE

Conference_Location

Cannes, France

Print_ISBN

0-7803-2012-3

Type

conf

DOI

10.1109/ULTSYM.1994.401561

Filename

401561