Carrier capture in 1.3 /spl mu/m InAsP-InGaAsP quantum well laser structures

Author

Slaby, R. ; Vaschenko, G. ; Menoni, C.S. ; Robinson, G.Y. ; Pikal, J.M. ; Sotomayor Torres, C.M.

Author_Institution

Bergische Univ., Wuppertal, Germany

fYear

2000

fDate

7-12 May 2000

Firstpage

176

Abstract

Summary form only given. Carrier transport, capture and escape processes in multiple quantum well (MQW) lasers have been shown to affect the high speed and static characteristics of the device. Recently, we have demonstrated that these processes also significantly affect the bias-dependent carrier lifetime, and consequently the recombination parameters that are extracted from this lifetime. In this work we investigate carrier transport processes in InAsP-InGaAsP MQW lasers from the transient response of the photoexcited emission created under conditions of high excitation.

Keywords

III-V semiconductors; carrier lifetime; carrier mobility; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; quantum well lasers; transients; 1.3 /spl mu/m InAsP/InGaAsP quantum well laser structures; 1.3 mum; InAsP-InGaAsP; InAsP-InGaAsP MQW lasers; bias-dependent carrier lifetime; carrier capture; carrier escape; carrier transport; carrier transport processes; high excitation; high speed characteristics; photoexcited emission; recombination parameters; static characteristics; transient response; Absorption; Charge carrier density; Filling; Gallium arsenide; Laser excitation; Nitrogen; Quantum well devices; Quantum well lasers; Time measurement; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.906878

Filename

906878