Design of a Low-power Voltage Reference Based on Subthreshold MOSFETs

Author

Xie, Guang-Jun ; Zhang, Chang-xuan ; Zhou, Yuan-yuan

Author_Institution

Dept. of Appl. Phys., Hefei Univ. of Technol., Hefei

fYear

2009

fDate

20-22 Feb. 2009

Firstpage

620

Lastpage

623

Abstract

A low-power MOSFET-only voltage reference circuit is proposed which compensates for the temperature dependence of a proportional-to-absolute-temperature (PTAT) voltage generated by a pair of MOS devices working in the subthreshold region with a gate-to-source voltage of an MOS transistor operating in the same region. The voltage reference circuit, designed for a standard 0.6 mum CMOS process, has been used in a low dropout voltage regulator (LDO). The circuit features good temperature stability i.e. 37.4 ppm/degC over the range from -40degC to 120degC, the supply voltage is 1.4 V-5.5 V and the quiescent current is 4 muA.

Keywords

MOSFET; low-power electronics; reference circuits; voltage regulators; MOS transistor; current 4 muA; low dropout voltage regulator; low-power voltage reference circuit; size 0.6 mum; subthreshold MOSFET; temperature -40 degC to 120 degC; temperature stability; voltage 1.4 V to 5.5 V; Analog circuits; CMOS technology; Character generation; Circuit stability; Energy consumption; Low voltage; MOSFETs; Photonic band gap; Regulators; Temperature dependence; low-power; subthreshold region; voltage reference;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Computer Technology, 2009 International Conference on

Conference_Location

Macau

Print_ISBN

978-0-7695-3559-3

Type

conf

DOI

10.1109/ICECT.2009.155

Filename

4796038