Rayleigh acoustic mode in aluminum nitride films

Author

Carlotti, G. ; Fioretto, D. ; Giovannini, L. ; Palmieri, L. ; Socino, G. ; Verdini, L. ; Verona, E.

Volume

1

fYear

1994

fDate

Oct. 31 1994-Nov. 3 1994

Firstpage

457

Abstract

Brillouin light scattering has been used for studying the propagation of the surface Rayleigh mode in AlN films grown by R.F. reactive diode magnetron sputtering on (1-11)-Si substrate. Since the velocity of the shear vertical wave in the film is higher than that in the substrate, the structure is of the type fast film/slow substrate. The evolution of the Rayleigh wave has been analyzed experimentally on films of different thickness between 20 nm and 1.2 μm. The Rayleigh mode exist up to a cutoff value of the ratio h/Λ. For higher values of this parameter this wave becomes a leaky mode radiating energy into the substrate. Measurement of its phase velocity enabled us to determine the value of the effective elastic constant c₄₄ of the film

Keywords

Brillouin spectra; III-V semiconductors; Rayleigh waves; aluminium compounds; elastic constants; piezoelectric semiconductors; piezoelectric thin films; semiconductor thin films; sputtered coatings; (1-11)-Si substrate; AlN; Brillouin light scattering; RF reactive diode magnetron sputtering; Rayleigh acoustic mode; Si; aluminum nitride films; elastic constant; fast film/slow substrate structure; leaky mode; phase velocity; shear vertical wave; surface mode; Aluminum materials/devices; Brillouin scattering; Leaky waves; Mechanical factors; Piezoelectric films/devices; Piezoelectric semiconductor materials/devices; Semiconductor films; Sputtering; Surface acoustic waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1994. Proceedings., 1994 IEEE

Conference_Location

Cannes, France

Print_ISBN

0-7803-2012-3

Type

conf

DOI

10.1109/ULTSYM.1994.401629

Filename

401629