Electric-field-induced second-harmonic generation microscopy

Summary form only given. Second harmonic generation occurs in semiconducting materials via the second-order polarizability, which is governed by the second-order nonlinear susceptibility tensor /spl chi//sup (3)/ applying a DC-electric-field across the material in the region of incident light forces an additional interaction that also produces second harmonic radiation through a third order /spl chi//sup (3)/ the second harmonic polarizability. In the present work, we use EFISH in conjunction with high-resolution microscope collection optics to image Schottky barrier fields with submicron resolution. With proper contact calibration, this system, as well as being useful for characterizing electrical contacts in submicron semiconductor device structures, could be useful as a dopant concentration measurement device since the spatial extent of the depletion region depends on dopant concentration. We believe we present the first EFISH images of Schottky barrier fields.