DocumentCode
2922671
Title
Increase in electromigration resistance by enhancing backflow effect
Author
Li, X.X. ; Zhang, W. ; Ji, Y. ; Wang, Z. ; Cheng, Y.H. ; Gao, G.B.
Author_Institution
Reliability Phys. Lab., Beijing Polytech. Univ., China
fYear
1992
fDate
March 31 1992-April 2 1992
Firstpage
211
Lastpage
216
Abstract
The backflow effect on electromigration has been studied in terms of experiment and theory. The difference of electromigration resistance between the two materials Al-2%Cu/Ti and the stress gradient caused by a discontinuous SiO/sub 2/ overcoating layer were used to enhance the backflow intentionally to restrain the electromigration and improve the lifetime of metallization. A theoretical model is proposed to explain the formation of backflow.<>
Keywords
VLSI; aluminium alloys; copper alloys; electromigration; metallisation; reliability; titanium; Al-Cu alloys; AlCu-Ti; SiO/sub 2/ overcoating; backflow effect; electromigration resistance; lifetime; metallization; model; stress gradient; Crystallization; Current density; Electromigration; Grain size; Inorganic materials; Metallization; Physics; Stress; Temperature; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-0473-X
Type
conf
DOI
10.1109/RELPHY.1992.187648
Filename
187648
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