• DocumentCode
    2922750
  • Title

    Impact of Mobile Charge on Matching Sensitivity in SOI Analog Circuits

  • Author

    Connell, M. ; Grady, M. ; Oldiges, P. ; Onsongo, D. ; Passaro, M. ; Rausch, W. ; Ronsheim, P. ; Siljenberg, D.

  • Author_Institution
    All of IBM Global Eng. Solutions, Rochester
  • fYear
    2007
  • fDate
    11-12 June 2007
  • Firstpage
    139
  • Lastpage
    142
  • Abstract
    Elements such as sodium and potassium can contaminate oxides in semiconductor devices, including buried oxides in Silicon-On-Insulator (SOI) devices. Common fabrication processes use chemicals which contain such contaminants - an example being chemical-mechanical polish slurries - which can contain high levels of sodium or potassium. When charge contamination, particularly mobile charge contamination, gets under SOI devices, it can shift characteristics such as threshold voltage, and when this happens in sensitive analog circuits, it can lead to yield and reliability issues. We will describe an example and suggest possible layout mitigation strategies.
  • Keywords
    analogue circuits; silicon-on-insulator; SOI analog circuits; fabrication processes; matching sensitivity; mobile charge; silicon-on-insulator; Analog circuits; Capacitance; Chemical processes; Contamination; Fabrication; Integrated circuit interconnections; Mirrors; Potential well; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMI
  • Conference_Location
    Stresa
  • Print_ISBN
    1-4244-0652-8
  • Electronic_ISBN
    1-4244-0653-6
  • Type

    conf

  • DOI
    10.1109/ASMC.2007.375101
  • Filename
    4259267