DocumentCode
2922750
Title
Impact of Mobile Charge on Matching Sensitivity in SOI Analog Circuits
Author
Connell, M. ; Grady, M. ; Oldiges, P. ; Onsongo, D. ; Passaro, M. ; Rausch, W. ; Ronsheim, P. ; Siljenberg, D.
Author_Institution
All of IBM Global Eng. Solutions, Rochester
fYear
2007
fDate
11-12 June 2007
Firstpage
139
Lastpage
142
Abstract
Elements such as sodium and potassium can contaminate oxides in semiconductor devices, including buried oxides in Silicon-On-Insulator (SOI) devices. Common fabrication processes use chemicals which contain such contaminants - an example being chemical-mechanical polish slurries - which can contain high levels of sodium or potassium. When charge contamination, particularly mobile charge contamination, gets under SOI devices, it can shift characteristics such as threshold voltage, and when this happens in sensitive analog circuits, it can lead to yield and reliability issues. We will describe an example and suggest possible layout mitigation strategies.
Keywords
analogue circuits; silicon-on-insulator; SOI analog circuits; fabrication processes; matching sensitivity; mobile charge; silicon-on-insulator; Analog circuits; Capacitance; Chemical processes; Contamination; Fabrication; Integrated circuit interconnections; Mirrors; Potential well; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMI
Conference_Location
Stresa
Print_ISBN
1-4244-0652-8
Electronic_ISBN
1-4244-0653-6
Type
conf
DOI
10.1109/ASMC.2007.375101
Filename
4259267
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