Limitations of Analysis of Metal Impurities Analysis in High-k Film

Author

Po, Ya-Ling ; Lin, Carol ; Chen, Shian-Shio ; Wang, Tings

fYear

2007

fDate

11-12 June 2007

Firstpage

268

Lastpage

270

Abstract

This work studies the efficiency of various approaches, using such instruments as total reflection X-ray fluorescence (TXRF), atomic absorption spectrometry (AAS) and inductively coupled plasma mass spectrometry (ICP-MS). The target metals are sodium (Na), aluminum (Al), calcium (Ca), chromium (Cr), ferrum (Fe), nickel (Ni), copper (Cu), zinc (Zn) and hafnium(Hf). Analytical approaches are employed to elucidate the surface impurities after the wafer has been processed.

Keywords

X-ray emission spectra; aluminium; calcium; chromium; copper; fluorescence; hafnium; hafnium compounds; high-k dielectric thin films; impurity absorption spectra; iron; mass spectra; nickel; sodium; zinc; HfO₂:Al; HfO₂:Ca; HfO₂:Cr; HfO₂:Cu; HfO₂:Fe; HfO₂:Hf; HfO₂:Na; HfO₂:Ni; HfO₂:Zn; MOS transistors; aluminum; atomic absorption spectrometry; calcium; chromium; copper; dielectric constant; ferrum; gate dielectric; hafnium; hafnium oxide film; high-k film; high-k gate insulators; inductively coupled plasma mass spectrometry; metal impurities analysis; nickel; sodium; surface impurities; total reflection X-ray fluorescence; zinc; Calcium; Chromium; Copper; High K dielectric materials; High-K gate dielectrics; Impurities; Mass spectroscopy; Nickel; Optical films; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMI

Conference_Location

Stresa

Print_ISBN

1-4244-0652-8

Electronic_ISBN

1-4244-0653-6

Type

conf

DOI

10.1109/ASMC.2007.375114

Filename

4259280