DocumentCode
2923196
Title
Study of Transistor and Product NBTI Lifetime Distributions
Author
Qin, Jin ; Yan, Baoguang ; Shoshany, Yossi ; Roy, Druker ; Rahamim, Hezi ; Marom, Haim ; Bernstein, Joseph B.
Author_Institution
Reliability Engineering, University of Maryland, College Park, College Park, MD 20740. Phone: 301-405-0767 Email: qjin@umd.edu
fYear
2008
fDate
12-16 Oct. 2008
Firstpage
1
Lastpage
16
Abstract
Simulation provides more insights of NBTI at low cumulative failure which is not easy to obtain through measurement. Monte-Carlo simulation has demonstrated that NBTI lifetime distribution at transistor level follows lognormal distribution. Rare-Event simulation shows that Weibull distribution fits better than lognormal distribution at product level. Analysis of 90nm SRAM NBTI accelerated test results confirms the product level simulation result.
Keywords
Degradation; Educational institutions; Extrapolation; Life estimation; Life testing; Niobium compounds; Random access memory; Reliability engineering; Titanium compounds; Weibull distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location
South lake Tahoe, CA, USA
ISSN
1930-8841
Print_ISBN
978-1-4244-2194-7
Electronic_ISBN
1930-8841
Type
conf
DOI
10.1109/IRWS.2008.4796134
Filename
4796134
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