Polycrystalline silicon thin-film solar cell prepared by the solid phase crystallization (SPC) method

Author

Baba, T. ; Matsuyama, T. ; Sawada, T. ; Takahama, T. ; Wakisaka, K. ; Tsuda, S. ; Nakano, S.

Author_Institution

New Mater. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1315

Abstract

A solid phase crystallization (SPC) method was applied to the fabrication of thin-film polycrystalline silicon (poly-Si) for solar cells for the first time. Among crystalline silicon solar cells crystallized at a low temperature of less than 600°C, the world´s highest conversion efficiency of 8.5% was achieved in a solar cell using thin-film poly-Si with only 10 μm thickness prepared by the SPC method. This solar cell showed high photosensitivity in the long-wavelength region of more than 800 nm and also exhibited no light-induced degradation after light exposure

Keywords

crystallisation; elemental semiconductors; plasma CVD; plasma CVD coatings; semiconductor growth; semiconductor materials; semiconductor thin films; silicon; solar cells; 10 mum; 8.5 percent; Si; conversion efficiency; high photosensitivity; light exposure; long-wavelength region; nucleation layer; solid phase crystallization; thin film polycrystalline Si solar cells; Crystallization; Doping; Optical films; Photovoltaic cells; Plasma temperature; Semiconductor thin films; Silicon; Solids; Substrates; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520188

Filename

520188