Modeling of power reflection in microwave detected photoconductance decay [in Si solar cells]

Author

Ghannam, Moustafa Y. ; Mahmoud, Samir F. ; Nijs, Johan F.

Author_Institution

Dept. of Electr. & Comput. Eng., Kuwait Univ., Safat, Kuwait

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1441

Abstract

Equivalent electrical circuits are proposed for modeling microwave power reflection in the microwave detected photoconductance decay set up for lifetime measurement during solar cell fabrication. The microwave reflectance is calculated analytically for electrically thin single and multi-layer silicon samples as a function of the sample conductivity. Expressions are derived for the optimum values of the measurement parameters leading to maximum sensitivity. Finally, a recursive reflection relation is developed for the calculation of the exact reflectance in the general case

Keywords

carrier lifetime; elemental semiconductors; equivalent circuits; measurement theory; microwave measurement; power measurement; semiconductor device models; semiconductor device testing; silicon; solar cells; Si; equivalent electrical circuits; lifetime measurement; measurement parameters; microwave detected photoconductance decay; multi-layer samples; power reflection modelling; recursive reflection relation; sample conductivity; sensitivity; solar cell fabrication; thin single samples; Conductivity; Fabrication; Lifetime estimation; Microwave circuits; Photoconducting devices; Photoconductivity; Photovoltaic cells; Reflection; Reflectivity; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520220

Filename

520220