High characteristic temperature of near 1.3-/spl mu/m InGaAs/GaAs quantum-dot lasers

Summary form only given. Quantum-dot lasers are expected to attain remarkable reduction in threshold current and temperature-insensitive operation, however, high characteristic temperature of threshold current (T/sub 0/) has not yet been achieved except lasers which required huge current injection. For example, the dot lasers with low threshold current density or currents close to 10 mA have T/sub 0/ of 40-80 K. We report T/sub 0/ of 120 K in near-1.3-/spl mu/m InGaAs/GaAs quantum-dot lasers having a threshold current of 13 mA at room temperature. The ground-level lasing occurred up to 100/spl deg/C. We compared the optical properties of the lasers with those of other dot lasers to indicate what were the key points for the achievements. We fabricated ridge-type lasers using molecular beam epitaxy.