• DocumentCode
    2925658
  • Title

    Diode-pumped passively Q-switched high-brightness microchip lasers

  • Author

    Sakai, Hiroshi ; Sone, Akihiro ; Kan, Hirohumi ; Taira, Takunori

  • Author_Institution
    Central Research Laboratory, Hamamatsu Photonics K. K., Japan, h-sakai@crl.hpk.co.jp
  • fYear
    2005
  • fDate
    30-02 Aug. 2005
  • Firstpage
    1246
  • Lastpage
    1247
  • Abstract
    We have demonstrated the diode end-pumped high-brightness Nd3+:YAG microchip lasers, passively Q-switched by Cr4+:YAG as a saturable absorber (SA). In order to optimize the output characteristic of the laser, we have investigated the transmission of Cr4+:YAG, and acquired the dependence of the pulse energy density on the initial transmission with the final transmission that was provided from the measurement. As a result, its maximum output pulse energy was 0.95 mJ with the pulse width of 480 ps and the peak power was 1.7 MW and a beam quality was M2= 1.05 with 100 Hz repetition frequency.
  • Keywords
    Chromium; Density measurement; Diodes; Energy measurement; Frequency; Microchip lasers; Neodymium; Optical pulses; Pulse measurements; Space vector pulse width modulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
  • Print_ISBN
    0-7803-9242-6
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2005.1569709
  • Filename
    1569709
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2925658