A new phase noise reduction technique for MMIC oscillators

Author

Darwish, A.M. ; Ezzeddine, A.K. ; Hung, H.-L.A. ; Phelleps, F.R.

Author_Institution

COMSAT Lab., Clarksburg, MD, USA

fYear

1992

fDate

1-5 June 1992

Firstpage

463

Abstract

A novel technique for reducing oscillator phase noise has been demonstrated. The technique utilizes a pair of limiting diodes to keep the metal-semiconductor field-effect transistor operating in a linear region. An X-band monolithic microwave integrated circuit oscillator was designed, fabricated, and tested to demonstrate the concept. A reduction of 15 dB in phase noise at 5 kHz from the carrier was measured. The technique is ideal for GaAs monolithic implementation, and can also be applied to silicon bipolar-based oscillators for phase-noise reduction.<>

Keywords

MMIC; Schottky gate field effect transistors; microwave oscillators; semiconductor device noise; MMIC oscillators; X-band; bipolar-based oscillators; limiting diodes; linear region; metal-semiconductor field-effect transistor; oscillator phase noise; phase noise reduction technique; Circuit testing; Diodes; Field effect MMICs; Integrated circuit testing; Microwave FET integrated circuits; Microwave integrated circuits; Microwave oscillators; Monolithic integrated circuits; Noise measurement; Phase noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188013

Filename

188013