Shot noise in quasi one-dimensional FETs

Author

Betti, A. ; Fiori, G. ; Iannaccone, G.

Author_Institution

Dipt. di Ing. dell´´Inf., Univ. di Pisa, Pisa

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

We propose a novel and general method to investigate shot noise in nanoscale devices by means of Monte Carlo simulations within the self-consistent 3D Poisson-NEGF framework, focusing our attention on Carbon Nanotube and Silicon Nanowire Field effect transistors. We will show that Pauli exclusion principle and Coulomb interactions play an important role in device electrical behavior. In particular, their combined effect leads to a reduction of shot noise in strong inversion down to 23% of the full shot power spectral density for a gate overdrive of 0.4 V.

Keywords

Monte Carlo methods; carbon nanotubes; field effect transistors; nanotube devices; nanowires; semiconductor device noise; shot noise; 3D Poisson-NEGF framework; Coulomb interactions; Monte Carlo simulations; Pauli exclusion principle; carbon nanotube field effect transistors; electrical behavior; full shot power spectral density; gate overdrive; nanoscale device; quasi one-dimensional FET; shot noise; silicon nanowire field effect transistors; Carbon nanotubes; Conductors; Electrons; FETs; MOSFETs; Nanoscale devices; Noise reduction; Poisson equations; Reservoirs; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796648

Filename

4796648