DocumentCode
2929218
Title
The predicted signal to noise performance of a photodiode-distributed amplifier optical detector
Author
Aitchison, C.S.
Author_Institution
Brunel Univ., Uxbridge, UK
fYear
1992
fDate
1-5 June 1992
Firstpage
769
Abstract
Calculates the signal to noise ratios obtained from an optical detector consisting of a p-i-n photodiode-grounded source MESFET amplifier and also from a p-i-n photodiode-distributed amplifier combination. Expressions are given for both and compared numerically showing that the distributed amplifier combination is superior by up to 10 dB for bandwidths up to 40 GHz. The calculation assumes that the optical power is the same for the purpose of comparison and that the optical level is such that shot noise can be neglected.<>
Keywords
Schottky gate field effect transistors; optical receivers; p-i-n photodiodes; 40 GHz; optical level; p-i-n photodiode-grounded source MESFET amplifier; photodiode-distributed amplifier optical detector; shot noise; signal to noise performance; Bandwidth; Distributed amplifiers; MESFETs; Optical amplifiers; Optical detectors; Optical noise; PIN photodiodes; Semiconductor optical amplifiers; Signal to noise ratio; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location
Albuquerque, NM, USA
ISSN
0149-645X
Print_ISBN
0-7803-0611-2
Type
conf
DOI
10.1109/MWSYM.1992.188099
Filename
188099
Link To Document