Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism

Author

Wei, Z. ; Kanzawa, Y. ; Arita, K. ; Katoh, Y. ; Kawai, K. ; Muraoka, S. ; Mitani, S. ; Fujii, S. ; Katayama, K. ; Iijima, M. ; Mikawa, T. ; Ninomiya, T. ; Miyanaga, R. ; Kawashima, Y. ; Tsuji, K. ; Himeno, A. ; Okada, T. ; Azuma, R. ; Shimakawa, K. ; Suga

Author_Institution

Adv. Devices Dev. Center, Panasonic Corp., Moriguchi

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

Highly reliable TaO_x ReRAM has been successfully demonstrated. The memory cell shows stable pulse switching with endurance over 10⁹ cycles, sufficient retention exceeding 10 years at 85degC. TaO_x exhibits stable high and low resistance states based on the redox reaction mechanism, confirmed by HX-PES directly for the first time. An 8 kbit 1T1R memory array with a good operating window has been fabricated using the standard 0.18 mum CMOS process.

Keywords

CMOS memory circuits; X-ray photoelectron spectra; arrays; electrical resistivity; integrated circuit reliability; oxidation; random-access storage; reduction (chemical); tantalum compounds; 0.18 mum CMOS process; 1T1R memory array; HX-PES; ReRAM reliability; TaO_x; X-ray photoemission spectroscopy; endurance; memory cell; pulse switching stability; redox reaction mechanism; resistance random access memory; resistance states; retention property; size 0.18 micron; temperature 85 degC; Anodes; CMOS process; CMOS technology; Chemistry; Cities and towns; Electrodes; Flash memory; Random access memory; Sputtering; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796676

Filename

4796676