Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack

N-type InGaAs MOS devices are fabricated using HfO₂/TaN and HfAlO/TaN gate stacks. Both direct deposition and novel in-situ plasma PH₃ surface passivation are compared. The PH₃-passivated MOS capacitances shows high performance with EOT=1.7_~3.0 nm, J_g=2times10^-5 A/cm² at V_g=2 V. After RTA, gate stack maintains stable with excellent C-V frequency dispersion of 1.3%. Silicon implanted InGaAs achieves good n⁺-p rectifying characteristic and low resistivity in the n⁺ S/D by 600degC RTA. Inversion-mode nMOSFET exhibits remarkable enhancement with the PH₃-passivation. It shows an excellent S.S.=96 mV/dec and mu_eff=1600 cm²/Vs. There is significant reduction in S.S. and leap in drain current comparing to the recent reported inversion-mode III-V MOSFET and unpassivated control samples. In addition, sub 100 nm InGaAs MOSFET with the self-aligned gate-first process is demonstrated for the first time.