Session 21: Solid-state and nanoelectronic devices carbon-based devices

This session is devoted to carbon-based devices. The first three papers cover various aspects of graphene field-effect transistors. First, the paper by Z. Chen of IBM and J. Appenzeller of Purdue University reports the measurement of quantum capacitance and suggests a different method for extracting field-effect mobility. Next, the paper by I. Meric et al., of Columbia University presents the first RF measurements of graphene field-effect transistors. Finally, the paper by Y. Ouyang et al., of the University of Florida provides a theoretical assessment of the performance limits of graphene nanoribbon (GNR) FETs with different edge-termination species. The last three papers describe the benefits of carbon for various other applications. First, F. Kreupl et al., of Qimonda propose a carbon-based resistive memory. Next, H. Li and K. Banerjee of University of California Santa Barbara discuss single-walled and multi-walled carbon nanotube (CNT) bundles for RF inductor applications. Finally, H. Dadgour et al., of The University of California Santa Barbara present a scaling and variability analysis of carbon nanotube-based nano-electro-mechanical (NEM) devices.