• DocumentCode
    2930551
  • Title

    Power MOSFETs working in linear zone: The dangerous effect of the K gain factor on thermal instability

  • Author

    Consentino, Giuseppe

  • Author_Institution
    STMicroelectron., Catania, Italy
  • fYear
    2012
  • fDate
    20-22 June 2012
  • Firstpage
    1515
  • Lastpage
    1519
  • Abstract
    The gain factor K of the power MOSFET is an electrical parameter that mathematically speaking connects VGS to ID. Practically, higher is K higher will be ID fixing VGS, VTH and all the others physical and electrical parameters. K is a very important electrical parameter regarding the power MOSFET working in linear operating zone. In fact, even if, typically, higher K factor needs in switching operation mode, in linear zone, instead, K must be low to avoid a possible premature failure of the device.
  • Keywords
    power MOSFET; dangerous effect; electrical parameter; gain factor; linear operating zone; linear zone; physical parameters; power MOSFET; switching operation mode; thermal instability; MOSFETs; Performance evaluation; Power electronics; Standards; Switches; Thermal factors; Thermal resistance; Gain factor; Linear zone; power MOSFET; thermal instability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM), 2012 International Symposium on
  • Conference_Location
    Sorrento
  • Print_ISBN
    978-1-4673-1299-8
  • Type

    conf

  • DOI
    10.1109/SPEEDAM.2012.6264522
  • Filename
    6264522