Session 22: Modeling and simulation atomistic process simulation and memory modeling

The papers in this session focus on modeling and simulation of semiconductor fabrication processes and memory technologies. The first two papers by Pelaz et al., and Noda et al., present interesting results from kinetic Monte Carlo simulations of ion implantation and diffusion in silicon. An atomistic approach was used by Yuan et al., in the third paper. They model the implantation and diffusion of fluorine into Group III nitride semiconductors. Finally, Marukame et al., used ab-initio simulations to investigate the impact of platinum incorporation on the stability of nickel silicide junctions. The second part of the session - devoted to memory technology - starts with a paper by Rajendran et al., about an analytical model for the reset operation of phase change memories. Next, Mauri et al., use a physics-based model to describe program/erase performance of TANOS memories. A semi-analytical model for write and erase cycles tailored for nitride charge-trap tri-gate non-volatile memories is the subject of the next paper by Nowak et al., The last paper by Gao et al., presents an ion-transport-recombination model to explain the reset behavior of RRAMs.