• DocumentCode
    2930899
  • Title

    Session 25: Special evening session the future of fabs

  • Author

    Stork, Hans

  • Author_Institution
    Applied Materials, USA
  • fYear
    2008
  • fDate
    15-17 Dec. 2008
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    The history of semiconductor fabs has seen exponential growth in size, volume and cost. From chemistry lab to ultra-clean, large wafer automated handling systems, the productivity increase has contributed to the sustained cost reduction as guided by Moore´s law. If history were to repeat, 450mm wafer sizes would soon be here, single wafer processing would be the only tool option, and the productivity of just a few of such gigafabs would be enough to supply the smallest geometries. What factors would control this transition? Will non-optical litho be an essential element of this? What will happen to the 300mm fabs? Perhaps the change to atomic layer control dictates different processing priorities, perhaps wafers are not the only or ultimate substrate for all applications? Will the less scalable technologies like analog, or MEMS, or (bio)medical demand a higher fraction of worldwide capacity growth? These and other questions will be discussed by a distinguished panel of fab experts from Samsung, TSMC, Toshiba, Micron, ASML, and Applied Materials.
  • Keywords
    Atomic layer deposition; Chemistry; Costs; Geometry; History; Micromechanical devices; Moore´s Law; Process control; Productivity; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2008. IEDM 2008. IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    8164-2284
  • Print_ISBN
    978-1-4244-2377-4
  • Electronic_ISBN
    8164-2284
  • Type

    conf

  • DOI
    10.1109/IEDM.2008.4796759
  • Filename
    4796759