0.25 mu m PHEMT X-band multifunction LNA MMIC with T/R switch and attenuator achieves 1.85 dB noise figure

The performance of a 7-11-GHz LNA (low-noise amplifier) MIC (monolithic microwave integrated circuit) which advances performance and integration standards is presented. A 1.8-dB noise figure (NF), 19-dB-gain LNA is coupled with a 0.5-dB insertion loss T/R (transmit/receive) switch and switched attenuator for a MMIC with 1.85-dB NF, 18-dB gain at 10 GHz. The X-band multifunction LNA MMIC was fabricated on the GE 0.25- mu m pseudomorphic high-electron-mobility transistor (PHEMT) process. The noise figure for the MMIC is below 2.2 dB (minimum 1.85 dB), the gain is above 20 dB, and the input return loss is better than 13 dB from 7 GHz to 11 GHz. The T/R switch and 8-dB attenuator function as designed. This excellent performance can be attributed to careful measurement, accurate modeling of a large number of devices, thorough design, and careful, repeatable fabrication.<>