DocumentCode
2931351
Title
2-22 GHz low phase noise silicon bipolar YIG tuned oscillator using composite feedback
Author
Khanna, A.P.S. ; Buenrostro, J.
Author_Institution
Avantek, Milpitas, CA, USA
fYear
1992
fDate
1-5 June 1992
Firstpage
1297
Abstract
The authors present a fundamental YIG tuned oscillator which covers the frequency range of 2 to 22 GHz, using a high-frequency silicon bipolar transistor and a single YIG sphere. A unique composite feedback approach has been utilized to demonstrate a minimum of 10-dBm power output and phase noise of -95 dBc/Hz at 10 kHz across most of the band. The design approach and performance results of this widest-band and low-noise oscillator are described.<>
Keywords
bipolar transistor circuits; garnets; microwave oscillators; semiconductor device noise; solid-state microwave circuits; tuning; yttrium compounds; 2 to 22 GHz; Si transistor; YFe5O12; YIG tuned oscillator; YTO; bipolar transistor; composite feedback; design approach; frequency range; garnets; low phase noise; low-noise oscillator; performance results; phase noise; power output; single YIG sphere; wideband oscillators; Bipolar transistors; Feedback; Frequency; Gallium arsenide; Microwave FETs; Microwave oscillators; Phase noise; Silicon; Switches; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location
Albuquerque, NM, USA
ISSN
0149-645X
Print_ISBN
0-7803-0611-2
Type
conf
DOI
10.1109/MWSYM.1992.188240
Filename
188240
Link To Document