High-power, wide-temperature range operation of 1.3-μm complex-coupled DFB lasers with automatically buried absorptive grating

Author

Kito, Masanobu ; Otsuka, N. ; Nakamura, Shigenari ; Ishino, Masanori ; Matsui, Yusuke

Author_Institution

Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

fYear

1996

fDate

25 Feb.-1 March 1996

Firstpage

38

Lastpage

39

Abstract

Summary form only given. In this paper, we present a novel structure of 1.3 μm strained-layer multiple quantum well (MQW) complex-coupled DFB laser with automatically buried absorptive grating. These lasers can be fabricated by a very simple process and show high single-mode performance. An InAsP absorptive grating is selectively formed on the concave region of the corrugated InP substrate.

Keywords

diffraction gratings; distributed feedback lasers; laser feedback; laser modes; optical couplers; optical fabrication; quantum well lasers; μm complex-coupled DFB lasers; 1.3 mum; InAsP; InAsP absorptive grating; InP; automatically buried absorptive grating; concave region; corrugated InP substrate; high single-mode performance; high-power; laser fabrication; strained-layer multiple quantum well complex-coupled DFB laser; wide-temperature range operation; Distributed feedback devices; Gratings; Laser feedback; Power generation; Power lasers; Quantum well devices; Quantum well lasers; Semiconductor lasers; Substrates; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communications, 1996. OFC '96

Print_ISBN

1-55752-422-X

Type

conf

DOI

10.1109/OFC.1996.907621

Filename

907621