• DocumentCode
    2933501
  • Title

    LLG simulation of MRAM switching rates

  • Author

    Visscher, P.B. ; Wang, S.

  • Author_Institution
    Alabama Univ., Tuscaloosa
  • fYear
    2006
  • fDate
    8-12 May 2006
  • Firstpage
    34
  • Lastpage
    34
  • Abstract
    In this paper we describe a new method for computing rates by LLG (Landau-Lifshitz-Gilbert) simulation, and also show that the simple transition state theory (TST) approximation is not only very accurate. The problem of calculating MRAM switching rates has been well-studied for the case of thermal switching in uniaxial particles, mostly by solution of the Fokker-Planck (FP) equation for a non-steady state system.
  • Keywords
    Fokker-Planck equation; random-access storage; Fokker-Planck equation; Landau-Lifshitz-Gilbert simulation; MRAM switching rates; nonsteady state system; thermal switching; transition state theory approximation; Computational modeling; Damping; Equations; Magnetic switching; Magnetization; Orbits; Physics; Potential well; Switches; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2006. INTERMAG 2006. IEEE International
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    1-4244-1479-2
  • Type

    conf

  • DOI
    10.1109/INTMAG.2006.375534
  • Filename
    4261468
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2933501