• DocumentCode
    2934690
  • Title

    High-reliability InAlGaAs/InAlAs superlattice avalanche photodiodes for 2.5-10 Gbit/s applications

  • Author

    Watanabe, I. ; Tsuji, M. ; Hayashi, M. ; Makita, K. ; Taguchi, K.

  • Author_Institution
    Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
  • fYear
    1996
  • fDate
    25 Feb.-1 March 1996
  • Firstpage
    174
  • Lastpage
    175
  • Abstract
    Summary form only given. In summary, a lifetime over 1.0×105 hours at 50°C was attained by the simple mesa-structure InAlGaAs-InAlAs superlattice avalanche photodiodes (SLAPDs) for the first time. This lifetime is in a sufficient level for 2.5-10 Gbit/s high-speed LAN and data-link applications.
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; optical communication equipment; optical fibre LAN; semiconductor superlattices; 2.5 to 10 Gbit/s; Gbit/s applications; Gbit/s high-speed LAN; InAlGaAs-InAlAs; InAlGaAs-InAlAs superlattice avalanche photodiodes; InAlGaAs/InAlAs superlattice avalanche photodiodes; data-link applications; high-reliability; lifetime; mesa-structure; Absorption; Aging; Avalanche photodiodes; Dark current; Indium compounds; Indium phosphide; Local area networks; Superlattices; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communications, 1996. OFC '96
  • Print_ISBN
    1-55752-422-X
  • Type

    conf

  • DOI
    10.1109/OFC.1996.907741
  • Filename
    907741
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2934690